技术指标

• Wafer size：300 wafer 
• CD measurement principle：Cursor and line profile measurement
• CD measurement range：0.05 to 2.0 um
• Throughput：33 wafers/hr, 1 point/chip, 20 chips/wafer
• Secondary electron image resolution：2 nm (at accelerating voltage of 0.8 kV; with Hitachi High-Technologies Corporation reference specimen for resolution measurement)
• Magnification：SEM image; 1000x to 300,000x
• Repeatability：Static measurement repeatability (3σ) 0.6 nm or 1%
• Dynamic measurement repeatability (3σ) 1.7 nm or 1%